PMF170XP Datasheet, PDF (1/15 Pages) NXP Semiconductors – 20 V, 1 A P-channel Trench MOSFET

PMF170XP
20 V, 1 A P-channel Trench MOSFET
29 October 2013
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) small
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
• Low R_DSon
• Very fast switching
• Trench MOSFET technology
3. Applications
• Relay driver
• High-speed line driver
• High-side loadswitch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
V_DS
drain-source voltage
V_GS
gate-source voltage
I_D
drain current
Static characteristics
R_DSon
drain-source on-state
resistance
Conditions
T_j = 25 °C
V_GS = -4.5 V; T_amb 25 °C
V_GS = -4.5 V; I_D = -1 A; T_j = 25 °C
Min Typ Max Unit
-
-
-20 V
-12 -
12
V
[1]
-
-
-1
A
-
175 200 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm².
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