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PMEM1505NG Datasheet, PDF (1/11 Pages) NXP Semiconductors – NPN transistor/Schottky rectifier module
PMEM1505NG
NPN transistor/Schottky rectifier module
Rev. 02 — 31 August 2009
Product data sheet
1. Product profile
1.1 General description
Combination of an NPN transistor with low VCEsat and high current capability and a planar
Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT353
(SC-88A) small plastic package. PNP complement: PMEM1505PG
1.2 Features
I 300 mW total power dissipation
I Current capability up to 0.5 A
I Reduces printed-circuit board area required
I Reduces pick and place costs
I Small plastic SMD package
I Transistor
N Low collector-emitter saturation voltage.
I Diode
N Ultra high-speed switching
N Very low forward voltage
N Guard ring protected
1.3 Applications
I DC-to-DC converters
I General purpose load drivers
I MOSFET drivers
I Inductive load drivers
I Reverse polarity protection circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
NPN transistor
VCEO
collector-emitter voltage open base
-
-
15
V
IC
collector current (DC)
continuous
[1] -
-
0.5
A
Schottky barrier rectifier
VR
continuous reverse voltage
-
-
20
V
IF
continuous forward current
-
-
0.5
A
[1] Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint for SOT353.