PMEG6030EVP Datasheet, PDF (1/13 Pages) NXP Semiconductors – Low voltage rectification

PMEG6030EVP
High-temperature 60 V, 3 A Schottky barrier rectifier
4 March 2013
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead
Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
• Average forward current: I_F(AV) ≤ 3 A
• Reverse voltage: V_R ≤ 60 V
• Low forward voltage
• High power capability due to clip-bonding technology
• Small and flat lead SMD plastic package
• AEC-Q101 qualified
• High temperature T_j ≤ 175 °C
3. Applications
• Low voltage rectification
• High efficiency DC-to-DC conversion
• Switch mode power supply
• Reverse polarity protection
• Low power consumption application
4. Quick reference data
Table 1.
Symbol
I_F(AV)
V_R
V_F
Quick reference data
Parameter
average forward
current
reverse voltage
forward voltage
I_R
reverse current
Conditions
δ = 0.5 ; f = 20 kHz; T_sp ≤ 165 °C;
square wave
T_j = 25 °C
I_F = 3 A; t_p ≤ 300 µs; δ ≤ 0.02 ;
T_j = 25 °C; pulsed
T_j = 25 °C; V_R = 60 V; pulsed
Min Typ Max Unit
-
-
3
A
-
-
60
V
-
420 475 mV
-
115 400 µA
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