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PMEG6010ER Datasheet, PDF (1/14 Pages) NXP Semiconductors – 1 A low VF MEGA Schottky barrier rectifier | |||
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PMEG6010ER
1 A low VF MEGA Schottky barrier rectifier
Rev. 01 â 9 March 2010
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD123W small and flat
lead Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
 Average forward current: IF(AV) ⤠1 A
 Reverse voltage: VR ⤠60 V
 Low forward voltage
 High power capability due to clip-bond technology
 AEC-Q101 qualified
 Small and flat lead SMD plastic package
1.3 Applications
 Low voltage rectification
 High efficiency DC-to-DC conversion
 Switch Mode Power Supply (SMPS)
 Reverse polarity protection
 Low power consumption applications
1.4 Quick reference data
Table 1. Quick reference data
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max
IF(AV)
average forward current
square wave;
δ = 0.5;
f = 20 kHz
Tamb ⤠110 °C [1] -
-
1
Tsp ⤠140 °C
-
-
1
VR
reverse voltage
-
-
60
VF
forward voltage
IF = 1 A
-
460 530
IR
reverse current
VR = 60 V
-
30
60
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
Unit
A
A
V
mV
μA
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