PMEG6010CPA Datasheet, PDF (1/15 Pages) NXP Semiconductors – 1 A low VF dual MEGA Schottky barrier rectifier

PMEG6010CPA
1 A low V_F dual MEGA Schottky barrier rectifier
Rev. 1 — 25 August 2010
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier in
common cathode configuration with an integrated guard ring for stress protection,
encapsulated in a SOT1061 leadless small Surface-Mounted Device (SMD) plastic
package with medium power capability.
1.2 Features and benefits
„ Average forward current: I_F(AV) ≤ 1 A
„ Reverse voltage: V_R ≤ 60 V
„ Low forward voltage
„ Exposed heat sink (cathode pad) for excellent thermal and electrical conductivity
„ Leadless small SMD plastic package with medium power capability
„ AEC-Q101 qualified
1.3 Applications
„ Low voltage rectification
„ High efficiency DC-to-DC conversion
„ Switch Mode Power Supply (SMPS)
„ Reverse polarity protection
„ Low power consumption applications
„ Battery chargers for mobile equipment
1.4 Quick reference data
Table 1. Quick reference data
T_j = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max
Per diode
I_F(AV)
average forward
current
square wave;
δ = 0.5; f = 20 kHz
T_amb ≤ 110 °C
[1] _-
-
1
T_sp ≤ 140 °C
-
-
1
V_R
reverse voltage
-
-
60
V_F
forward voltage
I_F = 1 A
-
490 540
I_R
reverse current
V_R = 60 V
-
33
100
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al₂O₃, standard footprint.
Unit
A
A
V
mV
μA