PMEG4010ER_10 Datasheet, PDF (1/14 Pages) NXP Semiconductors – 1 A low VF MEGA Schottky barrier rectifier

PMEG4010ER
1 A low V_F MEGA Schottky barrier rectifier
Rev. 02 — 15 April 2010
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD123W small and flat
lead Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
„ Average forward current: I_F(AV) ≤ 1 A
„ Reverse voltage: V_R ≤ 40 V
„ Low forward voltage
„ High power capability due to clip-bond technology
„ AEC-Q101 qualified
„ Small and flat lead SMD plastic package
1.3 Applications
„ Low voltage rectification
„ High efficiency DC-to-DC conversion
„ Switch Mode Power Supply (SMPS)
„ Reverse polarity protection
„ Low power consumption applications
1.4 Quick reference data
Table 1. Quick reference data
T_j = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max
I_F(AV)
average forward current
square wave;
δ = 0.5;
f = 20 kHz
T_amb ≤ 115 °C ^[1] -
-
1
T_sp ≤ 140 °C
-
-
1
V_R
reverse voltage
-
-
40
V_F
forward voltage
I_F = 1 A
-
430 490
I_R
reverse current
V_R = 40 V
-
10
50
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al₂O₃, standard footprint.
Unit
A
A
V
mV
μA