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| PMEG4010ER Datasheet, PDF (1/13 Pages) NXP Semiconductors – 1 A low VF MEGA Schottky barrier rectifier | |||
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PMEG4010ER
1 A low VF MEGA Schottky barrier rectiï¬er
Rev. 01 â 9 December 2008
Product data sheet
1. Product proï¬le
1.1 General description
Planar Maximum Efï¬ciency General Application (MEGA) Schottky barrier rectiï¬er with an
integrated guard ring for stress protection, encapsulated in a SOD123W small and ï¬at
lead Surface-Mounted Device (SMD) plastic package.
1.2 Features
I Average forward current: IF(AV) ⤠1 A
I Reverse voltage: VR ⤠40 V
I Low forward voltage
I High power capability due to clip-bond technology
I AEC-Q101 qualiï¬ed
I Small and ï¬at lead SMD plastic package
1.3 Applications
I Low voltage rectiï¬cation
I High efï¬ciency DC-to-DC conversion
I Switch Mode Power Supply (SMPS)
I Reverse polarity protection
I Low power consumption applications
1.4 Quick reference data
Table 1. Quick reference data
Tj = 25 °C unless otherwise speciï¬ed.
Symbol Parameter
Conditions
Min Typ Max
IF(AV)
average forward current
square wave;
δ = 0.5;
f = 20 kHz
Tamb ⤠115 °C [1] -
-
1
Tsp ⤠140 °C
-
-
1
VR
reverse voltage
-
-
40
VF
forward voltage
IR
reverse current
IF = 1 A
VR = 40 V
-
430 490
-
10
50
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
Unit
A
A
V
mV
µA
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