PMEG4010AESB Datasheet, PDF (1/14 Pages) NXP Semiconductors – 40 V, 1 A low VF MEGA Schottky barrier rectifier

PMEG4010AESB
40 V, 1 A low VF MEGA Schottky barrier rectifier
6 October 2015
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection in a leadless ultra small DSN1006-2 (SOD993)
Surface-Mounted Device (SMD) package.
2. Features and benefits
• Average forward current: I_F(AV) ≤ 1 A
• Reverse voltage: V_R ≤ 40 V
• Low forward voltage, typical: V_F = 435 mV
• Low reverse current, typical: I_R = 325 µA
• Package height typ. 270 µm
3. Applications
• Low voltage rectification
• High efficiency DC-to-DC conversion
• Switch mode power supply
• Low power consumption applications
• Ultra high-speed switching
• LED backlight for mobile application
4. Quick reference data
Table 1.
Symbol
I_F(AV)
V_R
V_F
Quick reference data
Parameter
average forward
current
reverse voltage
forward voltage
I_R
reverse current
Conditions
δ = 0.5 ; f = 20 kHz; T_sp ≤ 145 °C;
square wave
T_j = 25 °C
I_F = 1 A; t_p ≤ 300 µs; δ ≤ 0.02 ;
T_j = 25 °C
V_R = 20 V; t_p ≤ 3 ms; δ ≤ 0.3 ;
T_j = 25 °C
V_R = 40 V; t_p ≤ 3 ms; δ ≤ 0.3 ;
T_j = 25 °C
Min Typ Max Unit
-
-
1
A
-
-
40
V
-
435 505 mV
-
30
115 µA
-
325 1250 µA
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