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PMEG4002ESF Datasheet, PDF (1/14 Pages) NXP Semiconductors – 40 V, 0.2 A low VF MEGA Schottky barrier rectifier | |||
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PMEG4002ESF
40 V, 0.2 A low VF MEGA Schottky barrier rectifier
6 February 2015
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with
an integrated guard ring for stress protection in a DSN0603-2 (SOD962-2) leadless ultra
small Chip-Scale Package (CSP).
2. Features and benefits
⢠Average forward current IF(AV) ⤠0.2 A
⢠Reverse voltage VR ⤠40 V
⢠Low forward voltage typ. VF = 315 mV
⢠Low reverse current typ. IR = 0.24 µA
⢠Package height typ. 0.3 mm
3. Applications
⢠Low voltage rectification
⢠High efficiency DC-to-DC conversion
⢠Switch mode power supply
⢠Ultra high-speed switching
⢠LED backlight for mobile application
4. Quick reference data
Table 1.
Symbol
IF(AV)
VR
VF
IR
trr
Quick reference data
Parameter
Conditions
average forward
current
δ = 0.5; f = 20 kHz; Tsp ⤠147 °C;
square wave
δ = 0.5; f = 20 kHz; Tamb ⤠140 °C;
square wave
reverse voltage
Tj = 25 °C
forward voltage
IF = 10 mA; tp ⤠300 µs; δ ⤠0.02;
Tj = 25 °C
reverse current
VR = 10 V; Tj = 25 °C; pulsed
reverse recovery time IF = 500 mA; IR = 500 mA;
IR(meas) = 100 mA; Tj = 25 °C
Min Typ Max Unit
-
-
0.2 A
[1]
-
-
0.2 A
-
-
40
V
-
315 390 mV
-
0.24 2.5 µA
-
1.28 -
ns
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
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