 English |
|
|
|
|
|
|
|
| PMEG4002EJ Datasheet, PDF (1/13 Pages) NXP Semiconductors – 200 mA low VF MEGA Schottky barrier rectifier | |||
| |||
|
PMEG4002EJ
200 mA low VF MEGA Schottky barrier rectiï¬er
Rev. 01 â 15 May 2009
Product data sheet
1. Product proï¬le
1.1 General description
Planar Maximum Efï¬ciency General Application (MEGA) Schottky barrier rectiï¬er with an
integrated guard ring for stress protection, encapsulated in a SOD323F (SC-90) small and
ï¬at lead Surface-Mounted Device (SMD) plastic package.
1.2 Features
I Average forward current: IF(AV) ⤠0.2 A
I Reverse voltage: VR ⤠40 V
I Low forward voltage
I AEC-Q101 qualiï¬ed
I Small and ï¬at lead SMD plastic package
1.3 Applications
I Low voltage rectiï¬cation
I High efï¬ciency DC-to-DC conversion
I Switch Mode Power Supply (SMPS)
I Reverse polarity protection
I Ultra high-speed switching
I Low power consumption applications
1.4 Quick reference data
Table 1. Quick reference data
Tj = 25 °C unless otherwise speciï¬ed.
Symbol Parameter
Conditions
Min Typ Max
IF(AV)
average forward current
square wave;
δ = 0.5;
f = 20 kHz
Tamb ⤠130 °C [1] -
-
0.2
Tsp ⤠145 °C
-
-
0.2
VR
reverse voltage
-
-
40
VF
forward voltage
IR
reverse current
IF = 0.2 A
VR = 40 V
-
520 600
-
0.7 10
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
Unit
A
A
V
mV
µA
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese