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PMEG3020EPA Datasheet, PDF (1/13 Pages) NXP Semiconductors – 2 A low VF MEGA Schottky barrier rectifier | |||
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PMEG3020EPA
2 A low VF MEGA Schottky barrier rectifier
Rev. 01 â 15 December 2009
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection. PMEG3020EPA is encapsulated in an ultra thin
SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium
power capability.
1.2 Features
 Average forward current: IF(AV) ⤠2 A
 Reverse voltage: VR ⤠30 V
 Low forward voltage
 Exposed heat sink (cathode pad) for excellent thermal and electrical conductivity
 Leadless small SMD plastic package with medium power capability
 AEC-Q101 qualified
1.3 Applications
 Low voltage rectification
 High efficiency DC-to-DC conversion
 Switch Mode Power Supply (SMPS)
 Reverse polarity protection
 Low power consumption applications
 Battery chargers for mobile equipment
1.4 Quick reference data
Table 1. Quick reference data
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max
IF(AV)
average forward current
square wave;
δ = 0.5;
f = 20 kHz
VR
reverse voltage
VF
forward voltage
IR
reverse current
Tamb ⤠65 °C
Tsp ⤠140 °C
[1] -
-
-
IF = 2 A
-
VR = 30 V
-
-
2
-
2
-
30
410 470
435 2500
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
Unit
A
A
V
mV
μA
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