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PMEG2020CPA Datasheet, PDF (1/15 Pages) NXP Semiconductors – 2 A low VF dual MEGA Schottky barrier rectifier | |||
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PMEG2020CPA
2 A low VF dual MEGA Schottky barrier rectifier
Rev. 1 â 5 August 2010
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier in
common cathode configuration with an integrated guard ring for stress protection,
encapsulated in a SOT1061 leadless small Surface-Mounted Device (SMD) plastic
package with medium power capability.
1.2 Features and benefits
 Average forward current: IF(AV) ⤠2 A
 Reverse voltage: VR ⤠20 V
 Low forward voltage
 Exposed heat sink (cathode pad) for excellent thermal and electrical conductivity
 Leadless small SMD plastic package with medium power capability
 AEC-Q101 qualified
1.3 Applications
 Low voltage rectification
 High efficiency DC-to-DC conversion
 Switch Mode Power Supply (SMPS)
 Reverse polarity protection
 Low power consumption applications
 Battery chargers for mobile equipment
1.4 Quick reference data
Table 1. Quick reference data
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max
Per diode
IF(AV)
average forward
current
square wave;
δ = 0.5; f = 20 kHz
Tamb ⤠80 °C
[1] -
-
2
Tsp ⤠140 °C
-
-
2
VR
reverse voltage
-
-
20
VF
forward voltage
IF = 2 A
-
385 420
IR
reverse current
VR = 20 V
-
380 1000
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
Unit
A
A
V
mV
μA
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