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| PMEG2010BELD Datasheet, PDF (1/14 Pages) NXP Semiconductors – 20 V, 1 A low VF MEGA Schottky barrier rectifier | |||
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PMEG2010BELD
20 V, 1 A low VF MEGA Schottky barrier rectifier
Rev. 1 â 18 April 2012
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a leadless ultra small
DFN1006D-2 (SOD882D) Surface-Mounted Device (SMD) plastic package with visible
and solderable side pads.
1.2 Features and benefits
ï® Average forward current: IF(AV) ⤠1 A
ï® Reverse voltage: VR ⤠20 V
ï® Low forward voltage VF ⤠490 mV
ï® AEC-Q101 qualified
ï® Ultra small and leadless SMD plastic
package
ï® Solderable side pads
ï® Package height typ. 0.37 mm
1.3 Applications
ï® Low voltage rectification
ï® High efficiency DC-to-DC conversion
ï® Switch mode power supply
ï® Reverse polarity protection
ï® Low power consumption applications
ï® Ultra high-speed switching
ï® LED backlight for mobile application
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
IF(AV)
average forward
current
δ = 0.5 ; f = 20 kHz; Tamb ⤠80 °C;
[1]
square wave
δ = 0.5 ; f = 20 kHz; Tsp ⤠130 °C;
square wave
VR
reverse voltage
Tj = 25 °C
VF
forward voltage
IF = 1 A; pulsed; tp ⤠300 µs; δ ⤠0.02 ;
Tj = 25 °C
IR
reverse current
VR = 10 V; Tj = 25 °C
trr
reverse recovery time IR = 0.5 A; IF = 0.5 A; IR(meas) = 0.1 A;
Tj = 25 °C
[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
Min Typ Max Unit
-
-
1
A
-
-
1
A
-
-
20 V
-
428 490 mV
-
28
50
µA
-
1.6 -
ns
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