PMEG2005CT Datasheet, PDF (1/14 Pages) NXP Semiconductors – 500 mA low VF dual MEGA Schottky barrier rectifier

PMEG2005CT
500 mA low V_F dual MEGA Schottky barrier rectifier
Rev. 2 — 22 June 2010
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier in
common cathode configuration with an integrated guard ring for stress protection,
encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic
package.
1.2 Features and benefits
„ Average forward current: I_F(AV) ≤ 0.5 A
„ Reverse voltage: V_R ≤ 20 V
„ Low forward voltage
„ AEC-Q101 qualified
„ Small SMD plastic package
1.3 Applications
„ Low voltage rectification
„ High efficiency DC-to-DC conversion
„ Switch Mode Power Supply (SMPS)
„ Reverse polarity protection
„ High-speed switching
„ Low power consumption applications
1.4 Quick reference data
Table 1. Quick reference data
T_j = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max
Per diode
I_F(AV)
average forward current
square wave;
δ = 0.5;
f = 20 kHz
V_R
reverse voltage
V_F
forward voltage
I_R
reverse current
T_amb ≤ 100 °C
T_sp ≤ 130 °C
[1] _-
-
-
I_F = 0.5 A
-
V_R = 20 V
-
-
0.5
-
0.5
-
20
360 390
30
200
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al₂O₃, standard footprint.
Unit
A
A
V
mV
μA