PMDT670UPE Datasheet, PDF (1/16 Pages) NXP Semiconductors – 20 V, 550 mA dual P-channel Trench MOSFET

PMDT670UPE
20 V, 550 mA dual P-channel Trench MOSFET
Rev. 1 — 13 September 2011
Product data sheet
1. Product profile
1.1 General description
Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat
lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
 Very fast switching
 Trench MOSFET technology
 ESD protection up to 2 kV
 AEC-Q101 qualified
1.3 Applications
 Relay driver
 High-speed line driver
 High-side loadswitch
 Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per transistor
V_DS
drain-source voltage T_j = 25 °C
V_GS
gate-source voltage
I_D
drain current
V_GS = -4.5 V; T_amb = 25 °C
[1]
Static characteristics (per transistor)
R_DSon
drain-source on-state V_GS = -4.5 V; I_D = -400 mA; T_j = 25 °C
resistance
Min Typ Max Unit
-
-
-8
-
-
-
-20 V
8
V
-550 mA
-
0.67 0.85 Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm².