PMDT290UCE Datasheet, PDF (1/20 Pages) NXP Semiconductors – 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET

PMDT290UCE
20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET
Rev. 1 — 6 October 2011
Product data sheet
1. Product profile
1.1 General description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra
small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
 Very fast switching
 Trench MOSFET technology
 ESD protection up to 2 kV
 AEC-Q101 qualified
1.3 Applications
 Relay driver
 High-speed line driver
 Low-side loadswitch
 Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
TR1 (N-channel), Static characteristics
R_DSon
drain-source on-state V_GS = 4.5 V; I_D = 500 mA; T_j = 25 °C
-
resistance
TR2 (P-channel), Static characteristics
R_DSon
drain-source on-state V_GS = -4.5 V; I_D = -400 mA; T_j = 25 °C
-
resistance
TR1 (N-channel)
V_DS
drain-source voltage
V_GS
gate-source voltage
I_D
drain current
TR2 (P-channel)
T_j = 25 °C
V_GS = 4.5 V; T_amb = 25 °C
-
-8
[1]
-
V_DS
drain-source voltage T_j = 25 °C
V_GS
gate-source voltage
I_D
drain current
V_GS = -4.5 V; T_amb = 25 °C
-
-8
[1]
-
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm².
Typ Max Unit
290 380 mΩ
0.67 0.85 Ω
-
20 V
-
8
V
-
800 mA
-
-20 V
-
8
V
-
-550 mA