PMCXB900UE Datasheet, PDF (1/20 Pages) NXP Semiconductors – 20 V, complementary N/P-channel Trench MOSFET

PMCXB900UE
20 V, complementary N/P-channel Trench MOSFET
7 October 2013
Product data sheet
1. General description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a
leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic
package using Trench MOSFET technology.
2. Features and benefits
• Trench MOSFET technology
• Very low threshold voltage for portable applications: V_GS(th) = 0.7 V
• Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
• ElectroStatic Discharge (ESD) protection > 1 kV HBM
3. Applications
• Relay driver
• High-speed line driver
• Level shifter
• Power management in battery-driven portables
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
TR1 (N-channel), Static characteristics
R_DSon
drain-source on-state V_GS = 4.5 V; I_D = 600 mA; T_j = 25 °C
resistance
TR2 (P-channel), Static characteristics
R_DSon
drain-source on-state V_GS = -4.5 V; I_D = -500 mA; T_j = 25 °C
resistance
TR1 (N-channel)
V_DS
drain-source voltage T_j = 25 °C
I_D
drain current
V_GS = 4.5 V; T_amb = 25 °C
[1]
TR2 (P-channel)
V_DS
drain-source voltage T_j = 25 °C
I_D
drain current
V_GS = -4.5 V; T_amb = 25 °C
[1]
Min Typ Max Unit
-
470 620 mΩ
-
1.02 1.4 Ω
-
-
20
V
-
-
600 mA
-
-
-20 V
-
-
-500 mA
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