PMC85XP Datasheet, PDF (1/15 Pages) NXP Semiconductors – 30 V P-channel MOSFET with pre-biased NPN transistor

PMC85XP
30 V P-channel MOSFET with pre-biased NPN transistor
15 May 2013
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in Trench MOSFET
technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium
power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
• Trench MOSFET technology
• NPN transistor built-in bias resistors
• Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
• Exposed drain pad for excellent thermal conduction
3. Applications
• Charging switch for portable devices
• High-side load switch
• USB port overvoltage protection
• Power management in battery-driven portables
• Hard disk and computing power management
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
P-channel Trench MOSFET
V_DS
drain-source voltage T_j = 25 °C
-
-
-30 V
V_GS
gate-source voltage
-12 -
12
V
I_D
drain current
V_GS = -4.5 V; T_amb = 25 °C; t ≤ 5 s
[1]
-
-
-3.4 A
P-channel Trench MOSFET; static characteristics
R_DSon
drain-source on-state V_GS = -4.5 V; I_D = -2.6 A; T_j = 25 °C
resistance
-
85
110 mΩ
NPN RET
V_CEO
collector-emitter
voltage
T_amb = 25 °C; open base
-
-
50
V
I_O
output current
-
-
100 mA
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