PHK5NQ15T Datasheet, PDF (1/13 Pages) NXP Semiconductors – TrenchMOS™ standard level FET

PHK5NQ15T
N-channel TrenchMOS standard level FET
Rev. 02 — 4 March 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
„ Low conduction losses due to low
on-state resistance
1.3 Applications
„ DC-to-DC convertors switching
„ General purpose switching
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 150 °C
I_D
drain current
T_sp = 25 °C; V_GS = 10 V;
see Figure 1 and 3
-
-
150 V
-
-
5
A
P_tot
total power
dissipation
T_sp = 25 °C; see Figure 2
-
-
6.25 W
Dynamic characteristics
Q_GD
gate-drain charge V_GS = 10 V; I_D = 5 A; V_DS = 75 V; -
12 -
nC
T_j = 25 °C; see Figure 11
Static characteristics
R_DSon drain-source
V_GS = 10 V; I_D = 5 A; T_j = 25 °C; -
on-state resistance see Figure 9 and 10
56 75 mΩ