PHK12NQ10T Datasheet, PDF (1/12 Pages) NXP Semiconductors – TrenchMOS standard level FET

PHK12NQ10T
N-channel TrenchMOS standard level FET
Rev. 02 — 24 November 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
„ Low conduction losses due to low
on-state resistance
1.3 Applications
„ DC-to-DC primary side switching
„ Portable equipment
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 150 °C
I_D
drain current
T_sp = 25 °C; V_GS = 10 V;
see Figure 3 and 1
P_tot
total power
dissipation
T_sp = 25 °C;see Figure 2
Dynamic characteristics
Q_GD
gate-drain charge V_GS = 10 V; I_D = 12 A;
V_DS = 50 V; T_j = 25 °C;
see Figure 11
Static characteristics
R_DSon
drain-source
on-state resistance
V_GS = 10 V; I_D = 6 A;
T_j = 25 °C;
see Figure 9 and 10
Min Typ Max Unit
-
-
100 V
-
-
11.6 A
-
-
8.9 W
-
9
-
nC
-
23.7 28 mΩ