PHE13005 Datasheet, PDF (1/12 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

PHE13005
Silicon diffused power transistor
Rev. 03 — 20 November 2009
Product data sheet
1. Product profile
1.1 General description
High voltage, high speed NPN planar-passivated power switching transistor in a SOT78
plastic package intended for use in high frequency electronic lighting ballast applications
1.2 Features and benefits
„ Fast switching
„ High voltage capability of 700 V
„ Low thermal resistance
1.3 Applications
„ Electronic lighting ballasts
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
I_C
collector current
P_tot
total power
dissipation
V_CESM collector-emitter
peak voltage
Static characteristics
h_FE
DC current gain
Conditions
DC; see Figure 3, 1 and 2
T_mb ≤ 25 °C; see Figure 4
V_BE = 0 V
I_C = 1 A; V_CE = 5 V;
T_mb = 25 °C; see Figure 11
I_C = 2 A; V_CE = 5 V;
T_mb = 25 °C; see Figure 11
Min Typ Max Unit
-
-
4
A
-
-
75 W
-
-
700 V
12 20 40
10 17 28