PHD20N06T Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

PHD20N06T
N-channel TrenchMOS standard level FET
Rev. 02 — 1 December 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
„ Low conduction losses due to low
on-state resistance
„ Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
„ DC-to-DC convertors
„ General purpose switching
„ Switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
V_DS
drain-source voltage 25 °C ≤ T_j ≤ 175 °C
I_D
drain current
T_mb = 25 °C; V_GS = 10 V;
see Figure 1 and 3
P_tot
total power
dissipation
T_mb = 25 °C;
see Figure 2
Dynamic characteristics
Q_GD
gate-drain charge V_GS = 10 V; I_D = 25 A;
V_DS = 44 V; T_j = 25 °C;
see Figure 13
Static characteristics
R_DSon
drain-source
on-state resistance
V_GS = 10 V; I_D = 10 A;
T_j = 175 °C;
see Figure 11 and 12
V_GS = 10 V; I_D = 10 A;
T_j = 25 °C;
see Figure 11 and 12
Min Typ Max Unit
-
-
55 V
-
-
18 A
-
-
51 W
-
6
-
nC
-
-
154 mΩ
-
65 77 mΩ