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PHD13005 Datasheet, PDF (1/14 Pages) NXP Semiconductors – NPN power transistor with integrated diode | |||
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PHD13005
NPN power transistor with integrated diode
Rev. 02 â 29 July 2010
Product data sheet
1. Product profile
1.1 General description
High voltage, high speed, planar passivated NPN power switching transistor with
integrated anti-parallel E-C diode in a SOT78 plastic package.
1.2 Features and benefits
 Fast switching
 High voltage capability
 Integrated anti-parallel E-C diode
 Low thermal resistance
1.3 Applications
 Integrated fluorescent lamp ballasts
e.g. high power cluster lamps
 Low Voltage Tungsten Halogen
transformers
 Remote fluorescent lamp ballasts
 Self Oscillating Power Supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
IC
collector current
see Figure 1; see Figure 2;
see Figure 4; DC
Ptot
total power
dissipation
see Figure 3; Tmb ⤠25 °C
VCESM
collector-emitter
peak voltage
VBE = 0 V
Static characteristics
hFE
DC current gain
VCE = 5 V; IC = 1.0 A;
see Figure 10
VCE = 5 V; IC = 2.0 A;
see Figure 10
Min Typ Max Unit
-
-
4A
-
-
75 W
-
-
700 V
12 20 40
10 17 28
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