PHB33NQ20T Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

PHB33NQ20T
N-channel TrenchMOS standard level FET
Rev. 02 — 3 February 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
„ Higher operating power due to low
thermal resistance
„ Low conduction losses due to low
on-state resistance
„ Simple gate drive required due to low
gate charge
„ Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
„ DC-to-DC primary side switching
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
T_mb = 25 °C; V_GS = 10 V;
see Figure 1; see Figure 3
P_tot
total power
dissipation
T_mb = 25 °C; see Figure 2
Dynamic characteristics
Q_GD
gate-drain charge V_GS = 10 V; I_D = 25 A;
V_DS = 100 V; T_j = 25 °C;
see Figure 11
Static characteristics
R_DSon
drain-source
on-state resistance
V_GS = 10 V; I_D = 15 A;
T_j = 25 °C; see Figure 9;
see Figure 10
Min Typ Max Unit
-
-
200 V
-
-
32.7 A
-
-
230 W
-
9.6 -
nC
-
65 77 mΩ