PHB29N08T Datasheet, PDF (1/12 Pages) NXP Semiconductors – TrenchMOS standard level FET

PHB29N08T
N-channel TrenchMOS standard level FET
Rev. 03 — 13 October 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
„ High noise immunity due to high gate
threshold voltage
„ Low conduction losses due to low
on-state resistance
1.3 Applications
„ Industrial motor control
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
T_mb = 25 °C; V_GS = 11 V;
see Figure 1 and 3
-
-
75 V
-
-
27 A
P_tot
total power
dissipation
T_mb = 25 °C; see Figure 2
-
-
88 W
Dynamic characteristics
Q_GD
gate-drain charge V_GS = 10 V; I_D = 29 A;
V_DS = 60 V; T_j = 25 °C;
see Figure 11
-
9
-
nC
Static characteristics
R_DSon drain-source
V_GS = 11 V; I_D = 14 A;
-
on-state resistance T_j = 175 °C; see Figure 9 and 10
V_GS = 11 V; I_D = 14 A; T_j = 25 °C; -
see Figure 9 and 10
96 120 mΩ
40 50 mΩ