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PHB20N06T Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET | |||
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PHB20N06T
N-channel TrenchMOS standard level FET
Rev. 02 â 25 November 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
 Low conduction losses due to low
on-state resistance
 Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
 DC-to-DC convertors
 Switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS
drain-source voltage Tj ⥠25 °C; Tj ⤠175 °C
ID
drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 3 and 1
Ptot
total power
dissipation
Tmb = 25 °C;
see Figure 2
Dynamic characteristics
QGD
gate-drain charge VGS = 10 V; ID = 25 A;
VDS = 44 V; Tj = 25 °C;
see Figure 13
Static characteristics
RDSon
drain-source
on-state resistance
VGS = 10 V; ID = 10 A;
Tj = 175 °C;
see Figure 11 and 12
VGS = 10 V; ID = 10 A;
Tj = 25 °C;
see Figure 11 and 12
Min Typ Max Unit
-
-
55 V
-
-
20.3 A
-
-
62 W
-
6
-
nC
-
-
150 mâ¦
-
64 75 mâ¦
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