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PHB191NQ06LT Datasheet, PDF (1/13 Pages) NXP Semiconductors – Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology | |||
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PHB191NQ06LT
N-channel TrenchMOS logic level FET
Rev. 02 â 13 January 2010
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
 Low conduction losses due to low
on-state resistance
 Suitable for logic level gate drive
sources
1.3 Applications
 DC-to-DC convertors
 General industrial applications
 Motors, lamps and solenoids
 Uninterruptible power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS
drain-source voltage Tj ⥠25 °C; Tj ⤠175 °C
ID
drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1 and 3
Ptot
total power
dissipation
Tmb = 25 °C; see Figure 2
Dynamic characteristics
QGD
gate-drain charge VGS = 5 V; ID = 25 A;
VDS = 44 V; Tj = 25 °C;
see Figure 11
Static characteristics
RDSon
drain-source
on-state resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C;
see Figure 10 and 9
Min Typ Max Unit
-
-
55 V
-
-
75 A
-
-
300 W
-
37.6 -
nC
-
3.1 3.7 mâ¦
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