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PHB119NQ06T Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET | |||
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PHB119NQ06T
N-channel TrenchMOS standard level FET
Rev. 02 â 15 April 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
 Low conduction losses due to low
on-state resistance
 Suitable for standard level gate drive
sources
1.3 Applications
 DC-to-DC convertors
 General industrial applications
 Motors, lamps and solenoids
 Uninterruptible power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj ⥠25 °C; Tj ⤠175 °C
voltage
ID
drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1; see Figure 3
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 9;
see Figure 10
Dynamic characteristics
QGD
gate-drain charge VGS = 10 V; ID = 25 A;
VDS = 44 V; Tj = 25 °C;
see Figure 11
Min Typ Max Unit
-
-
55 V
-
-
75 A
-
-
200 W
-
5.8 7.1 mâ¦
-
17 -
nC
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