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PH955L Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET | |||
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PH955L
N-channel TrenchMOS logic level FET
Rev. 02 â 19 February 2009
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
 Low conduction losses due to low
on-state resistance
 Suitable for logic level gate drive
sources
1.3 Applications
 DC-to-DC convertors
 General purpose power switching
 Motors, lamps and solenoids
 Portable equipment
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS
drain-source voltage Tj ⥠25 °C; Tj ⤠150 °C
ID
drain current
Tmb = 25 °C; VGS = 5 V;
see Figure 1; see Figure 3
Ptot
total power
dissipation
Tmb = 25 °C; see Figure 2
Dynamic characteristics
QGD
gate-drain charge VGS = 5 V; ID = 25 A;
VDS = 44 V; Tj = 25 °C;
see Figure 11; see Figure 12
Static characteristics
RDSon
drain-source
VGS = 10 V; ID = 25 A;
on-state resistance Tj = 25 °C; see Figure 10
Min Typ Max Unit
-
-
55 V
-
-
62.5 A
-
-
62.5 W
-
16.4 -
nC
-
6.2 8.3 mâ¦
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