English
Language : 

PH5525L Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET
PH5525L
N-channel TrenchMOS logic level FET
Rev. 02 — 5 December 2006
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology.
1.2 Features
I Logic level threshold
I Optimized for use in DC-to-DC
converters
I 100 % RG tested
1.3 Applications
I DC-to-DC converters
I Voltage regulators
I Lead-free package
I Very low switching and conduction
losses
I Switched-mode power supplies
I PC Motherboards
1.4 Quick reference data
I VDS ≤ 25 V
I RDSon ≤ 5.5 mΩ
I ID ≤ 81.7 A
I QGD = 3.3 nC (typ)
2. Pinning information
Table 1. Pinning
Pin
Description
1, 2, 3 source (S)
4
gate (G)
mb
mounting base; connected to drain (D)
Simplified outline
mb
1234
SOT669 (LFPAK)
Symbol
D
G
mbb076 S