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PH4840S Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET
PH4840S
N-channel TrenchMOS intermediate level FET
Rev. 02 — 6 November 2006
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS technology.
1.2 Features
I Low thermal resistance
I Low threshold voltage
I SO8 equivalent area footprint
I Low on-state resistance
1.3 Applications
I DC-to-DC converters
I Portable appliances
I DC motor drives
I Switched-mode power supplies
I Notebook computers
1.4 Quick reference data
I VDS ≤ 40 V
I RDSon ≤ 4.1 mΩ
I ID ≤ 94.5 A
I Ptot ≤ 62.5 W
2. Pinning information
Table 1. Pinning
Pin
Description
1, 2, 3 source (S)
4
gate (G)
mb
mounting base; connected to drain (D)
Simplified outline
mb
1234
SOT669 (LFPAK)
Symbol
D
G
mbb076 S