PH4330L Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

PH4330L
N-channel TrenchMOS logic level FET
Rev. 01 — 22 October 2008
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology.
1.2 Features and benefits
„ 100 % gate resistance tested
„ 100 % ruggedness tested
„ Lead-free package
„ Logic level threshold
„ Optimized for use in DC-DC
converters
„ Very low switching and conduction
losses
1.3 Applications
„ DC-to-DC convertors
„ PC motherboards
„ Switched-mode power supplies
„ Voltage regulators
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 150 °C
I_D
drain current
T_mb = 25 °C; V_GS = 10 V;
see Figure 1; see Figure 3
Dynamic characteristics
Q_GD
gate-drain charge V_GS = 4.5 V; I_D = 25 A;
V_DS = 12 V; see Figure 11;
see Figure 12
Static characteristics
R_DSon
drain-source
on-state resistance
V_GS = 10 V; I_D = 25 A;
T_j = 25 °C; see Figure 9; see
Figure 10
Min Typ Max Unit
-
-
30 V
-
-
95.9 A
-
5.4 -
nC
-
3.6 4.3 mΩ