|
PH2925U Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel TrenchMOS™ ultra low level FET | |||
|
PH2925U
N-channel TrenchMOS ultra low level FET
Rev. 04 â 24 February 2009
Product data sheet
1. Product profile
1.1 General description
Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
 Higher operating power due to low
thermal resistance
 Interfaces directly with low voltage
gate drivers
 Low conduction losses due to low
on-state resistance
1.3 Applications
 DC-to-DC convertors
 Notebook computers
 Portable equipment
 Switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS
drain-source voltage Tj ⥠25 °C; Tj ⤠150 °C
ID
drain current
Tmb = 25 °C; VGS = 4.5 V;
see Figure 1; see Figure 3
Ptot
total power
dissipation
Tmb = 25 °C; see Figure 2
Dynamic characteristics
QGD
gate-drain charge VGS = 4.5 V; ID = 50 A;
VDS = 10 V; Tj = 25 °C;
see Figure 10; see Figure 11
Static characteristics
RDSon
drain-source
on-state resistance
VGS = 4.5 V; ID = 25 A;
Tj = 25 °C; see Figure 8;
see Figure 9
Min Typ Max Unit
-
-
25 V
-
-
100 A
-
-
62.5 W
-
20.2 -
nC
-
2.3 3
mâ¦
|
▷ |