PH1875L Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

PH1875L
N-channel TrenchMOS logic level FET
Rev. 01 — 29 November 2005
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology.
1.2 Features
s Logic level threshold
s Low thermal resistance
s Very low on-state resistance
s Surface-mounted package
1.3 Applications
s DC motor control
s DC-to-DC converters
s General purpose power switching
1.4 Quick reference data
s V_DS ≤ 75 V
s R_DSon ≤ 16.5 mΩ
s I_D ≤ 45.8 A
s Q_GD = 15.3 nC (typ)
2. Pinning information
Table 1: Pinning
Pin
Description
1, 2, 3 source (S)
4
gate (G)
mb
mounting base; connected to drain (D)
Simplified outline
mb
1234
SOT669 (LFPAK)
Symbol
D
G
mbb076 S