PESDXS2UQ_10 Datasheet, PDF (1/13 Pages) NXP Semiconductors – Double ESD protection diodes in SOT663 package

PESDxS2UQ series
Double ESD protection diodes in SOT663 package
Rev. 04 — 26 January 2010
Product data sheet
1. Product profile
1.1 General description
Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a SOT663 ultra
small and flat lead Surface-Mounted Device (SMD) plastic package designed to protect
up to two signal lines from the damage caused by ESD and other transients.
1.2 Features
„ Unidirectional ESD protection of up to „ ESD protection up to 30 kV
two lines
„ Max. peak pulse power: P_PP = 150 W „ IEC 61000-4-2; level 4 (ESD)
at t_p = 8/20 μs
„ Low clamping voltage: V_CL = 20 V
„ IEC 61000-4-5 (surge); I_PP = 15 A
at I_PP = 15 A
at t_p = 8/20 μs
„ Low reverse leakage current: I_RM < 1 nA
1.3 Applications
„ Computers and peripherals
„ Audio and video equipment
„ Communication systems
„ High-speed data lines
„ Parallel ports
1.4 Quick reference data
Table 1.
Symbol
V_RWM
C_d
Quick reference data
Parameter
reverse standoff voltage
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
diode capacitance
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
Conditions
f = 1 MHz; V_R = 0 V
Min Typ Max Unit
-
-
3.3 V
-
-
5
V
-
-
12
V
-
-
15
V
-
-
24
V
-
200 275 pF
-
150 215 pF
-
38
100 pF
-
32
70
pF
-
23
50
pF