PESDXL2BT Datasheet, PDF(1/14 Page) NXP Semiconductors – Low capacitance double bidirectional ESD protection diodes in SOT23

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PESDXL2BT Datasheet, PDF (1/14 Pages) NXP Semiconductors – Low capacitance double bidirectional ESD protection diodes in SOT23

PESDxL2BT series

Low capacitance double bidirectional ESD protection diodes

in SOT23

Rev. 02 â 25 August 2009

Product data sheet

1. Product proï¬le

1.1 General description

Low capacitance double bidirectional ElectroStatic Discharge (ESD) protection diodes in a

SOT23 small Surface Mounted Device (SMD) plastic package designed to protect two

signal lines from the damage caused by ESD and other transients.

1.2 Features

I ESD protection of two lines

I Max. peak pulse power: PPP = 350 W

I Low clamping voltage: VCL = 26 V

I Small SMD plastic package

I Ultra low leakage current: IRM < 90 nA

I ESD protection up to 23 kV

I IEC 61000-4-2, level 4 (ESD)

I IEC 61000-4-5 (surge); IPP = 15 A

1.3 Applications

I Computers and peripherals

I Audio and video equipment

I Cellular handsets and accessories

I Communication systems

I Portable electronics

I Subscriber Identity Module (SIM) card

protection

1.4 Quick reference data

Table 1.

Symbol

VRWM

Quick reference data

Parameter

reverse standoff voltage

PESD3V3L2BT

PESD5V0L2BT

PESD12VL2BT

PESD15VL2BT

PESD24VL2BT

diode capacitance

PESD3V3L2BT

PESD5V0L2BT

PESD12VL2BT

PESD15VL2BT

PESD24VL2BT

Conditions

VR = 0 V;

f = 1 MHz

Min Typ Max Unit

3.3 V

5.0 V

101 -

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