PESD5V0X1U Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-performance ESD protection for sensitive ICs

NXP ultra-low clamping
ESD protection diodes
PESD5V0X1U family
High-performance ESD protection
for sensitive ICs
Specifically designed for ultra-low clamping voltages, ultra-low overshoot voltages, and ultra-low
capacitance, these advanced devices provide the highest levels of protection against ESD strikes
for highly ESD-sensitive ICs.
Key features
`` Best-in-class overshoot voltage for an 8 kV ESD strike
`` Ultra-low clamping voltage of 7.5 V @ 30 ns after an `
8 kV ESD strike
`` Ultra-low capacitance: 0.95 pF
`` Innovative DFN1006D-2 (SOD882D) package with
solderable, tin-plated side pads
Key benefits
`` Highest level of protection against ESD strikes for highly
sensitive ICs
`` Ultra-small packages for compact PCB designs
Applications
`` High-speed data interfaces in communication, consumer,
and computing markets
`` Protection for highly sensitive interface controller ICs
Increased ESD vulnerability due to continuing miniaturization
200
low
180
180 nm
160
140
120
100
80
130 nm
90 nm
IC _{Miniaturization}
60
45 nm
40
35 nm
22 nm/15 nm/11 nm
20
(estimates)
0
high
1995
2000
2005
2010
Year
2015
2020
The ultra-small process technologies used to produce today’s
miniature semiconductors have the side-effect of making
the ICs more vulnerable to voltage transients caused by ESD
strikes. NXP’s PESD5V0X1U family supports these highly
sensitive ICs by providing high-performance ESD protection.