PESD5V0X1BT Datasheet, PDF(1/13 Page) NXP Semiconductors – Ultra low capacitance bidirectional ESD protection diodes

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PESD5V0X1BT Datasheet, PDF (1/13 Pages) NXP Semiconductors – Ultra low capacitance bidirectional ESD protection diodes

PESD5V0X1BQ; PESD5V0X1BT

Ultra low capacitance bidirectional ESD protection diodes

Rev. 01 â 30 October 2008

Product data sheet

1. Product proï¬le

1.1 General description

Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diodes in

small Surface-Mounted Device (SMD) plastic packages designed to protect one signal

line from the damage caused by ESD and other transients.

The devices may also be used for unidirectional ESD protection of up to two signal lines.

Table 1. Product overview

Type number

Package

NXP

PESD5V0X1BQ

SOT663

PESD5V0X1BT

SOT23

JEDEC

TO-236AB

Package conï¬guration

ultra small and ï¬at lead

very small

1.2 Features

I Bidirectional ESD protection of one line I ESD protection up to 9 kV

I Unidirectional ESD protection of up to I IEC 61000-4-2; level 4 (ESD)

two lines

I Ultra low diode capacitance: Cd = 0.9 pF I AEC-Q101 qualiï¬ed

I Very low leakage current: IRM = 1 nA

1.3 Applications

I USB interfaces

I Antenna protection

I Radio Frequency (RF) protection

I 10/100/1000 Mbit/s Ethernet

I FireWire

I Asymmetric Digital Subscriber Line

(ADSL)

I High-speed data lines

I Subscriber Identity Module (SIM) card

protection

I Computers, peripherals and printers

I Cellular handsets and accessories

I Portable electronics

I Communication systems

I Audio and video equipment

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