PESD5V0X1BL_09 Datasheet, PDF(1/11 Page) NXP Semiconductors – Ultra low capacitance bidirectional ESD protection diode

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PESD5V0X1BL_09 Datasheet, PDF (1/11 Pages) NXP Semiconductors – Ultra low capacitance bidirectional ESD protection diode

PESD5V0X1BL

Ultra low capacitance bidirectional ESD protection diode

Rev. 02 â 16 July 2009

Product data sheet

1. Product proï¬le

1.1 General description

Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a

SOD882 leadless ultra small Surface-Mounted Device (SMD) plastic package designed

to protect one signal line from the damage caused by ESD and other transients.

1.2 Features

I Bidirectional ESD protection of one line I ESD protection up to 9 kV

I Ultra low diode capacitance: Cd = 0.9 pF I IEC 61000-4-2; level 4 (ESD)

I Very low leakage current: IRM = 1 nA I AEC-Q101 qualiï¬ed

1.3 Applications

I USB interfaces

I Antenna protection

I 10/100/1000 Mbit/s Ethernet

I FireWire

I High-speed data lines

I Subscriber Identity Module (SIM) card

protection

I Cellular handsets and accessories

I Portable electronics

I Communication systems

I Computers and peripherals

I Audio and video equipment

1.4 Quick reference data

Table 1. Quick reference data

Tamb = 25 Â°C unless otherwise speciï¬ed.

Symbol Parameter

Conditions

Per diode

VRWM

reverse standoff voltage

diode capacitance

f = 1 MHz; VR = 0 V

Min Typ Max Unit

0.9 1.3 pF

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