PESD5V0X1BL Datasheet, PDF(1/12 Page) NXP Semiconductors – Ultra low capacitance bidirectional ESD protection diodes

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PESD5V0X1BL Datasheet, PDF (1/12 Pages) NXP Semiconductors – Ultra low capacitance bidirectional ESD protection diodes

PESD5V0X1BA; PESD5V0X1BL

Ultra low capacitance bidirectional ESD protection diodes

Rev. 01 â 4 November 2008

Product data sheet

1. Product proï¬le

1.1 General description

Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diodes in

small Surface-Mounted Device (SMD) plastic packages designed to protect one signal

line from the damage caused by ESD and other transients.

Table 1. Product overview

Type number

Package

NXP

PESD5V0X1BA

SOD323

PESD5V0X1BL

SOD882

JEITA

SC-76

Package conï¬guration

very small

leadless ultra small

1.2 Features

I Bidirectional ESD protection of one line I ESD protection up to 9 kV

I Ultra low diode capacitance: Cd = 0.9 pF I IEC 61000-4-2; level 4 (ESD)

I Very low leakage current: IRM = 1 nA I AEC-Q101 qualiï¬ed

1.3 Applications

I USB interfaces

I Antenna protection

I 10/100/1000 Mbit/s Ethernet

I FireWire

I High-speed data lines

I Subscriber Identity Module (SIM) card

protection

I Cellular handsets and accessories

I Portable electronics

I Communication systems

I Computers and peripherals

I Audio and video equipment

1.4 Quick reference data

Table 2. Quick reference data

Tamb = 25 Â°C unless otherwise speciï¬ed.

Symbol Parameter

Conditions

Per diode

VRWM

reverse standoff voltage

diode capacitance

f = 1 MHz; VR = 0 V

Min Typ Max Unit

0.9 1.3 pF

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