PESD5V0V1BSF Datasheet, PDF (1/13 Pages) NXP Semiconductors – Ultra low profile bidirectional very low capacitance ESD protection diode

PESD5V0V1BSF
Ultra low profile bidirectional very low capacitance
ESD protection diode
Rev. 2 — 17 February 2011
Product data sheet
1. Product profile
1.1 General description
Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in
a SOD962 leadless ultra small Surface-Mounted Device (SMD) package designed to
protect one signal line from the damage caused by ESD and other transients.
1.2 Features and benefits
„ Pb-free, Restriction of Hazardous Substances (RoHS) compliant and free of halogen
and antimony (Dark Green compliant)
„ Bidirectional ESD protection of one line
„ Very low diode capacitance C_d = 3.5 pF
„ ESD protection up to ±15 kV according to IEC 61000-4-2
„ Ultra small SMD package
„ Symmetrical breakdown voltage
1.3 Applications
„ Cellular handsets and accessories
„ Portable electronics
„ Communication systems
„ Computers and peripherals
1.4 Quick reference data
Table 1. Quick reference data
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
V_RWM
reverse standoff voltage
−5
-
5
V
C_d
diode capacitance
f = 1 MHz; V_R = 0 V ^[1] 2.5
3.5
4.5
pF
[1] This parameter is guaranteed by design.