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PESD5V0V1BLD Datasheet, PDF (1/14 Pages) NXP Semiconductors – Very low capacitance bidirectional ESD protection diode | |||
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PESD5V0V1BLD
Very low capacitance bidirectional ESD protection diode
Rev. 1 â 7 December 2010
Product data sheet
1. Product profile
1.1 General description
Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode
designed to protect one signal line from the damage caused by ESD and other transients.
The device is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD)
plastic package with visible and solderable side pads.
1.2 Features and benefits
 Bidirectional ESD protection of one line  Low clamping voltage: VCL = 12.5 V
 Ultra small SMD plastic package
 Ultra low leakage current: IRM < 1 nA
 Solderable side pads
 ESD protection up to 30 kV
 Package height typ. 0.37 mm
 IEC 61000-4-2; level 4 (ESD)
 Very low diode capacitance: Cd = 11 pF  IEC 61000-4-5 (surge); IPP = 4.8 A
 Max. peak pulse power: PPP = 45 W  AEC-Q101 qualified
1.3 Applications
 Computers and peripherals
 Audio and video equipment
 Cellular handsets and accessories
 Subscriber Identity Module (SIM) card
protection
 Communication systems
 Portable electronics
 10/100 Mbit/s Ethernet
 FireWire
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VRWM
reverse standoff voltage
Cd
diode capacitance
f = 1 MHz; VR = 0 V
Min Typ Max Unit
-
-
5
V
-
11
13
pF
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