PESD5V0U4BF Datasheet, PDF(1/12 Page) NXP Semiconductors – Ultra low capacitance bidirectional quadruple ESD protection arrays

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PESD5V0U4BF Datasheet, PDF (1/12 Pages) NXP Semiconductors – Ultra low capacitance bidirectional quadruple ESD protection arrays

PESD5V0U4BF; PESD5V0U4BW

Ultra low capacitance bidirectional quadruple ESD

protection arrays

Rev. 01 â 15 August 2008

Product data sheet

1. Product proï¬le

1.1 General description

Ultra low capacitance bidirectional quadruple ElectroStatic Discharge (ESD) protection

arrays in ultra small Surface-Mounted Device (SMD) plastic packages designed to protect

up to four signal lines from the damage caused by ESD and other transients.

Table 1. Product overview

Type number

Package

NXP

PESD5V0U4BF

SOT886

PESD5V0U4BW

SOT665

JEDEC

MO-252

Package conï¬guration

leadless ultra small

ultra small and ï¬at lead

1.2 Features

I Bidirectional ESD protection of up to I ESD protection up to 10 kV

four lines

I Ultra low diode capacitance: Cd = 2.9 pF I IEC 61000-4-2; level 4 (ESD)

I Ultra low leakage current: IRM = 5 nA I AEC-Q101 qualiï¬ed

1.3 Applications

I Computers and peripherals

I Audio and video equipment

I Cellular handsets and accessories

I 10/100/1000 Mbit/s Ethernet

I Communication systems

I Portable electronics

I Subscriber Identity Module (SIM) card

protection

I FireWire

I High-speed data lines

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