PESD5V0U2BT Datasheet, PDF(1/11 Page) NXP Semiconductors – Ultra low capacitance bidirectional double ESD protection diode

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PESD5V0U2BT Datasheet, PDF (1/11 Pages) NXP Semiconductors – Ultra low capacitance bidirectional double ESD protection diode

PESD5V0U2BT

Ultra low capacitance bidirectional double ESD protection

diode

Rev. 01 â 27 March 2007

Product data sheet

1. Product proï¬le

1.1 General description

Ultra low capacitance bidirectional double ElectroStatic Discharge (ESD) protection diode

in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package designed

to protect two data lines from the damage caused by ESD.

1.2 Features

I Bidirectional ESD protection of two lines I Ultra low leakage current: IRM = 5 nA

I Ultra low diode capacitance: Cd = 2.9 pF I ESD protection of up to 10 kV

I IEC 61000-4-2; level 4 (ESD)

1.3 Applications

I Computers and peripherals

I Audio and video equipment

I Cellular handsets and accessories

I 10/100/1000 Ethernet

I Local Area Network (LAN) equipment

I Communication systems

I Portable electronics

I Subscriber Identity Module (SIM) card

protection

I FireWire

I High-speed data lines

1.4 Quick reference data

Table 1. Quick reference data

Tamb = 25 Â°C unless otherwise speciï¬ed.

Symbol Parameter

Conditions

Per diode

VRWM

reverse standoff voltage

diode capacitance

f = 1 MHz; VR = 0 V

Min Typ Max Unit

2.9 3.5 pF

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