PESD5V0U2BM Datasheet, PDF (1/11 Pages) NXP Semiconductors – Ultra low capacitance bidirectional double ESD protection array

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PESD5V0U2BM
Ultra low capacitance bidirectional double ESD
protection array
Rev. 01 — 14 August 2008
Product data sheet
1. Product profile
1.1 General description
Ultra low capacitance bidirectional double ElectroStatic Discharge (ESD) protection diode
array in a SOT883 (SC-101) leadless ultra small Surface-Mounted Device (SMD) plastic
package designed to protect up to two signal lines from the damage caused by ESD and
other transients.
1.2 Features
I Bidirectional ESD protection of up to I ESD protection up to 10 kV
two lines
I Ultra low diode capacitance: C_d = 2.9 pF I IEC 61000-4-2; level 4 (ESD)
I Ultra low leakage current: I_RM = 5 nA I AEC-Q101 qualified
1.3 Applications
I Computers and peripherals
I Audio and video equipment
I Cellular handsets and accessories
I 10/100/1000 Mbit/s Ethernet
I Communication systems
I Portable electronics
I Subscriber Identity Module (SIM) card
protection
I FireWire
I High-speed data lines
1.4 Quick reference data
Table 1. Quick reference data
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
V_RWM
C_d
reverse standoff voltage
diode capacitance
f = 1 MHz; V_R = 0 V
Min Typ Max Unit
-
-
5
V
-
2.9 3.5 pF