PESD5V0S2BT Datasheet, PDF(1/12 Page) NXP Semiconductors – Low capacitance bi-directional double ESD protection diode in SOT23 package

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PESD5V0S2BT Datasheet, PDF (1/12 Pages) NXP Semiconductors – Low capacitance bi-directional double ESD protection diode in SOT23 package

PESD5V0S2BT

Low capacitance bidirectional double ESD protection diode

Rev. 03 â 9 February 2009

Product data sheet

1. Product proï¬le

1.1 General description

Low capacitance bidirectional double ElectroStatic Discharge (ESD) protection diode in a

small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed to

protect two data lines from the damage caused by ESD and other transients.

1.2 Features

I Bidirectional ESD protection of two lines

I Low diode capacitance

I Max. peak pulse power: PPP = 130 W at tp = 8/20 Âµs

I Low clamping voltage: VCL = 14 V at IPP = 12 A

I Ultra low leakage current: IRM = 5 nA at VRWM = 5 V

I ESD protection up to 30 kV

I IEC 61000-4-2; level 4 (ESD)

I IEC 61000-4-5 (surge); IPP = 12 A at tp = 8/20 Âµs

1.3 Applications

I Cellular handsets and accessories

I Portable electronics

I Computers and peripherals

I Communication systems

I Audio and video equipment

1.4 Quick reference data

Table 1. Quick reference data

Tamb = 25 Â°C unless otherwise speciï¬ed.

Symbol Parameter

Conditions

VRWM

reverse standoff voltage

diode capacitance

f = 1 MHz;

VR = 0 V

Min Typ Max Unit

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