PESD5V0S1BSF_11 Datasheet, PDF (1/13 Pages) NXP Semiconductors – Ultra low profile bidirectional low capacitance ESD protection diode

PESD5V0S1BSF
Ultra low profile bidirectional low capacitance
ESD protection diode
Rev. 2 — 18 February 2011
Product data sheet
1. Product profile
1.1 General description
Low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a
SOD962 leadless ultra small Surface-Mounted Device (SMD) package designed to
protect one signal line from the damage caused by ESD and other transients.
1.2 Features and benefits
 Pb-free, Restriction of Hazardous Substances (RoHS) compliant and free of halogen
and antimony (Dark Green compliant)
 Bidirectional ESD protection of one line
 Low diode capacitance C_d = 35 pF
 ESD protection up to 30 kV according IEC 61000-4-2
 Ultra small SMD package
 Symmetrical breakdown voltage
1.3 Applications
 Cellular handsets and accessories
 Portable electronics
 Communication systems
 Computers and peripherals
1.4 Quick reference data
Table 1. Quick reference data
T_amb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
V_RWM
reverse standoff voltage
5
-
5
V
C_d
diode capacitance
f = 1 MHz; V_R = 0 V ^[1] 25
35
45
pF
[1] This parameter is guaranteed by design.