PESD5V0L6UAS Datasheet, PDF (1/14 Pages) NXP Semiconductors – Low capacitance 6-fold ESD protection diode arrays

PESD5V0L6UAS;
PESD5V0L6US
Low capacitance 6-fold ESD protection diode arrays
Rev. 03 — 18 August 2009
Product data sheet
1. Product profile
1.1 General description
Low capacitance 6-fold ESD protection diode arrays in small plastic packages designed to
protect up to six transmission or data lines from the damage caused by ElectroStatic
Discharge (ESD) and other transients.
Table 1. Product overview
Type number
Package
Name
PESD5V0L6UAS
TSSOP8
PESD5V0L6US
SO8
NXP
SOT505-1
SOT96-1
1.2 Features
I ESD protection of up to six lines
I Low diode capacitance
I Max. peak pulse power: P_PP = 35 W
I Low clamping voltage: V_(CL)R = 15 V
1.3 Applications
I Computers and peripherals
I Communication systems
I Audio and video equipment
I Ultra low leakage current: I_RM = 8 nA
I ESD protection of up to 20 kV
I IEC 61000-4-2, level 4 (ESD)
I IEC 61000-4-5 (surge); I_PP = 2.5 A
I High speed data lines
I Parallel ports
1.4 Quick reference data
Table 2.
Symbol
V_RWM
C_d
Quick reference data
Parameter
reverse stand-off voltage
diode capacitance
Conditions
V_R = 0 V;
f = 1 MHz
Min
Typ
Max Unit
-
-
5
V
-
16
19
pF