PESD1LIN_11 Datasheet, PDF (1/12 Pages) NXP Semiconductors – LIN-bus ESD protection diode ESD protection of one automotive LIN-bus line

PESD1LIN
LIN-bus ESD protection diode
Rev. 3 — 31 May 2011
Product data sheet
1. Product profile
1.1 General description
PESD1LIN in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic
package designed to protect one automotive Local Interconnect Network (LIN) bus line
from the damage caused by ElectroStatic Discharge (ESD) and other transients.
1.2 Features and benefits
 ESD protection of one automotive LIN-bus line
 Asymmetrical diode configuration ensures an optimized protection against
ElectroMagnetic Interferences (EMI) of a LIN Electronic Control Unit (ECU)
 Max. peak pulse power: P_PP = 160 W at t_p = 8/20 s
 Low clamping voltage: V_CL = 40 V at I_PP = 1 A
 Ultra low leakage current: I_RM < 1 nA
 ESD protection of up to 23 kV
 IEC 61000-4-2, level 4 (ESD)
 IEC 61000-4-5 (surge); I_PP = 3 A at t_p = 8/20 s
 AEC-Q101 qualified
1.3 Applications
 LIN-bus protection
 Automotive applications
1.4 Quick reference data
Table 1. Quick reference data
T_amb = 25 C unless otherwise specified.
Symbol Parameter
V_RWM
reverse standoff voltage
PESD1LIN (15 V)
PESD1LIN (24 V)
C_d
diode capacitance
Conditions
V_R = 0 V;
f = 1 MHz
Min Typ Max Unit
-
-
15
V
-
-
24
V
-
13
17
pF