PESD1LIN Datasheet, PDF(1/11 Page) NXP Semiconductors – LIN bus ESD protection diode in SOD323

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PESD1LIN Datasheet, PDF (1/11 Pages) NXP Semiconductors – LIN bus ESD protection diode in SOD323

PESD1LIN

LIN bus ESD protection diode

Rev. 02 â 12 November 2008

Product data sheet

1. Product proï¬le

1.1 General description

PESD1LIN in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic

package designed to protect one automotive Local Interconnect Network (LIN) bus line

from the damage caused by ElectroStatic Discharge (ESD) and other transients.

1.2 Features

I ESD protection of one automotive LIN bus line

I Asymmetrical diode conï¬guration ensures an optimized ElectroMagnetic

Immunity (EMI) of a LIN Electronic Control Unit (ECU)

I Due to the integrated diode structure only one very small SOD323 package is needed

I Max. peak pulse power: PPP = 160 W at tp = 8/20 Âµs

I Low clamping voltage: VCL = 40 V at IPP = 1 A

I Ultra low leakage current: IRM < 1 nA

I ESD protection of up to 23 kV

I IEC 61000-4-2, level 4 (ESD)

I IEC 61000-4-5 (surge); IPP = 3 A at tp = 8/20 Âµs

1.3 Applications

I LIN bus protection

I Automotive applications

1.4 Quick reference data

Table 1. Quick reference data

Tamb = 25 Â°C unless otherwise speciï¬ed.

Symbol Parameter

VRWM

reverse standoff voltage

PESD1LIN (15 V)

PESD1LIN (24 V)

diode capacitance

Conditions

VR = 0 V;

f = 1 MHz

Min Typ Max Unit

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